BSC026N08NS5
Manufacturer | Infineon Technologies |
Description | MOSFET N-CH 80V 23A/100A TDSON |
Category | Discrete Semiconductor |
Package | PG-TDSON-8-6 |
Status | New & original |
Ship From | HK/SHENZHEN |
Stocks | 50,000 |
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Description
The BSC026N08NS5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It is manufactured by Infineon Technologies.
Here are some key features and specifications of the BSC026N08NS5:
- Drain-Source Voltage (VDS): 80V
- Continuous Drain Current (ID): 120A
- RDS(on) (Drain-Source On-Resistance): 2.6mΩ
- Power Dissipation (PD): 360W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to +175°C
- Package: TO-263-7 (D2PAK-7)
Applications of the BSC026N08NS5 include:
- Power Supplies: It can be used in power supply circuits to efficiently regulate and control the flow of current.
- Motor Control: The MOSFET can be used in motor control circuits to drive and control the speed of motors.
- Switching Applications: It is suitable for various high-power switching applications, such as DC-DC converters, inverters, and motor drives.
- Automotive Electronics: The BSC026N08NS5 is designed to meet the requirements of automotive applications, such as electronic power steering, engine management systems, and hybrid/electric vehicle systems.
- Industrial Equipment: It can be used in industrial equipment, including robotics, automation systems, and power distribution systems.
Overall, the BSC026N08NS5 is a high-performance power MOSFET with low on-resistance and high current handling capabilities, making it suitable for a wide range of applications that require efficient power control and switching.