BSC026N08NS5

Manufacturer Infineon Technologies
Description MOSFET N-CH 80V 23A/100A TDSON
Category Discrete Semiconductor
Package PG-TDSON-8-6
Status New & original
Ship From HK/SHENZHEN
Stocks 50,000

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    Description

    The BSC026N08NS5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It is manufactured by Infineon Technologies.

    Here are some key features and specifications of the BSC026N08NS5:

    1. Drain-Source Voltage (VDS): 80V
    2. Continuous Drain Current (ID): 120A
    3. RDS(on) (Drain-Source On-Resistance): 2.6mΩ
    4. Power Dissipation (PD): 360W
    5. Gate-Source Voltage (VGS): ±20V
    6. Operating Temperature Range: -55°C to +175°C
    7. Package: TO-263-7 (D2PAK-7)

    Applications of the BSC026N08NS5 include:

    1. Power Supplies: It can be used in power supply circuits to efficiently regulate and control the flow of current.
    2. Motor Control: The MOSFET can be used in motor control circuits to drive and control the speed of motors.
    3. Switching Applications: It is suitable for various high-power switching applications, such as DC-DC converters, inverters, and motor drives.
    4. Automotive Electronics: The BSC026N08NS5 is designed to meet the requirements of automotive applications, such as electronic power steering, engine management systems, and hybrid/electric vehicle systems.
    5. Industrial Equipment: It can be used in industrial equipment, including robotics, automation systems, and power distribution systems.

    Overall, the BSC026N08NS5 is a high-performance power MOSFET with low on-resistance and high current handling capabilities, making it suitable for a wide range of applications that require efficient power control and switching.

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